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1

Degradation and breakdown in thin oxide layers: mechanisms, models and reliability prediction

R. Degraeve, B. Kaczer, G. Groeseneken

Journal:

Microelectronics Reliability

Year:

1999

Language:

english

File:

PDF, 288 KB

english, 1999

2

[IEEE 2008 15th International Symposium on the Physical and Failure Analysis of Integrated Circuits - singapore (2008.07.7-2008.07.11)] 2008 15th International Symposium on the Physical and Failure Analysis of Integrated Circuits - Review of reliability issues in high-k/metal gate stacks

Degraeve, R., Aoulaiche, M., Kaczer, B., Roussel, Ph., Kauerauf, T., Sahhaf, S., Groeseneken, G.

Year:

2008

Language:

english

File:

PDF, 360 KB

english, 2008

3

[IEEE 2010 IEEE International Reliability Physics Symposium - Garden Grove (Anaheim), CA, USA (2010.05.2-2010.05.6)] 2010 IEEE International Reliability Physics Symposium - Improvements of NBTI reliability in SiGe p-FETs

Franco, J., Kaczer, B., Cho, M., Eneman, G., Groeseneken, G., Grasser, T.

Year:

2010

Language:

english

File:

PDF, 622 KB

english, 2010

4

ECS Transactions [ECS 220th ECS Meeting - Boston, MA (October 9 - October 14, 2011)] - (Invited) Plasma Enhanced Atomic Layer Deposited Ruthenium for MIMCAP Applications

Swerts, Johan, Salimullah, M.M., Popovici, M., Kim, M.-S., Pawlak, M.A., Delabie, Annelies, Schaekers, M., Tomida, K., Kaczer, B., Opsomer, K., Vrancken, C., Debusschere, I, Altimime, L., Kittl, J.A.,

Year:

2011

Language:

english

File:

PDF, 1.03 MB

english, 2011

5

Commentary: Forgetting the best when predicting the worst: preliminary observations on neural circuit function in adolescent social anxiety

Fernández, Rodrigo S., Pedreira, María E., Boccia, Mariano M., Kaczer, Laura

Journal:

Frontiers in Psychology

Year:

2018

Language:

english

File:

PDF, 210 KB

english, 2018

6

A CMOS circuit for evaluating the NBTI over a wide frequency range

R. Fernández-García, B. Kaczer, G. Groeseneken

Journal:

Microelectronics Reliability

Year:

2009

Language:

english

File:

PDF, 1.58 MB

english, 2009

7

FinFET and MOSFET preliminary comparison of gate oxide reliability

R. Fernández, R. Rodríguez, M. Nafría, X. Aymerich, B. Kaczer, G. Groeseneken

Journal:

Microelectronics Reliability

Year:

2006

Language:

english

File:

PDF, 286 KB

english, 2006

8

[IEEE 2019 IEEE International Electron Devices Meeting (IEDM) - San Francisco, CA, USA (2019.12.7-2019.12.11)] 2019 IEEE International Electron Devices Meeting (IEDM) - Physical Insights on Steep Slope FEFETs including Nucleation-Propagation and Charge Trapping

Xiang, Y., Verhulst, A. S., Parvais, B., Horiguchi, N., Groeseneken, G., Houdt, J. Van, Bardon, M. Garcia, Alam, Md Nur K., Thesberg, M., Kaczer, B., Roussel, P., Popovici, M. I., Ragnarsson, L.-A., T

Year:

2019

Language:

english

File:

PDF, 3.51 MB

english, 2019

9

Animacy as a memory enhancer during novel word learning: evidence from orthographic and semantic memory tasks

Laurino, Julieta, Kaczer, Laura

Journal:

Year:

2019

Language:

english

File:

PDF, 1.66 MB

english, 2019

10

Understanding negative bias temperature instability in the context of hole trapping (Invited Paper)

T. Grasser, B. Kaczer, W. Goes, Th. Aichinger, Ph. Hehenberger, M. Nelhiebel

Journal:

Microelectronic Engineering

Year:

2009

Language:

english

File:

PDF, 516 KB

english, 2009

11

[IEEE 2014 IEEE International Integrated Reliability Workshop Final Report (IIRW) - South Lake Tahoe, CA, USA (2014.10.12-2014.10.16)] 2014 IEEE International Integrated Reliability Workshop Final Report (IIRW) - Dominant mechanisms of hot-carrier degradation in short- and long-channel transistors

Tyaginov, S., Bina, M., Franco, J., Wimmer, Y., Rudolf, F., Enichlmair, H., Park, J.-M., Kaczer, B., Ceric, H., Grasser, T.

Year:

2014

Language:

english

File:

PDF, 627 KB

english, 2014

12

High-resolution SILC measurements of thin SiO2 at ultra low voltages

S. Aresu, W. De Ceuninck, R. Dreesen, K. Croes, E. Andries, J. Manca, L. De Schepper, R. Degraeve, B. Kaczer, M. D’Olieslaeger, J. D’Haen

Journal:

Microelectronics Reliability

Year:

2002

File:

PDF, 919 KB

2002

13

Ultra-thin oxide reliability: searching for the thickness scaling limit

R Degraeve, B Kaczer, G Groeseneken

Journal:

Microelectronics Reliability

Year:

2000

Language:

english

File:

PDF, 327 KB

english, 2000

14

Off-State Degradation of High-Voltage-Tolerant nLDMOS-SCR ESD Devices

Griffoni, A., Shih-Hung Chen, Thijs, S., Kaczer, B., Franco, J., Linten, D., De Keersgieter, A., Groeseneken, G.

Journal:

IEEE Transactions on Electron Devices

Year:

2011

Language:

english

File:

PDF, 1.49 MB

english, 2011

15

Stochastic Modeling of the Impact of Random Dopants on Hot-Carrier Degradation in n-FinFETs

Makarov, Alexander, Kaczer, Ben, Roussel, Philippe, Chasin, Adrian, Grill, Alexander, Vandemaele, Michiel, Hellings, Geert, El-Sayed, Al-Moatasem, Grasser, Tibor, Linten, Dimitri, Tyaginov, Stanislav

Journal:

IEEE Electron Device Letters

Year:

2019

Language:

english

File:

PDF, 1.56 MB

english, 2019

16

Impact of the Device Geometric Parameters on Hot-Carrier Degradation in FinFETs

Tyaginov, S. E., Makarov, A. A., Kaczer, B., Jech, M., Chasin, A., Grill, A., Hellings, G., Vexler, M. I., Linten, D., Grasser, T.

Journal:

Year:

2018

Language:

english

File:

PDF, 545 KB

english, 2018

17

A brief overview of gate oxide defect properties and their relation to MOSFET instabilities and device and circuit time-dependent variability

Kaczer, B., Franco, J., Weckx, P., Roussel, Ph.J., Putcha, V., Bury, E., Simicic, M., Chasin, A., Linten, D., Parvais, B., Catthoor, F., Rzepa, G., Waltl, M., Grasser, T.

Journal:

Microelectronics Reliability

Year:

2018

Language:

english

File:

PDF, 1.17 MB

english, 2018

18

Progressive breakdown in ultrathin SiON dielectrics and its effect on transistor performance

Robert O’Connor, Greg Hughes, Robin Degraeve, Ben Kaczer

Journal:

Microelectronics Reliability

Year:

2005

Language:

english

File:

PDF, 203 KB

english, 2005

19

[IEEE 2007 14th International Symposium on the Physical and Failure Analysis of Integrated Circuits - Bangalore, India (2007.07.11-2007.07.13)] 2007 14th International Symposium on the Physical and Failure Analysis of Integrated Circuits - Proof-of-Concept Structure for Investigation of Successive Soft Gate Oxide Breakdowns in Two Dimensions

Kaczer, B., Fernandez, R., Nackaert, A., Chiarella, T., Groeseneken, G.

Year:

2007

Language:

english

File:

PDF, 3.88 MB

english, 2007

20

Comphy — A compact-physics framework for unified modeling of BTI

Rzepa, G., Franco, J., O’Sullivan, B., Subirats, A., Simicic, M., Hellings, G., Weckx, P., Jech, M., Knobloch, T., Waltl, M., Roussel, P.J., Linten, D., Kaczer, B., Grasser, T.

Journal:

Microelectronics Reliability

Year:

2018

Language:

english

File:

PDF, 5.36 MB

english, 2018

21

NBTI reliability of Ni FUSI/HfSiON gates: Effect of silicide phase

A. Shickova, B. Kaczer, A. Veloso, M. Aoulaiche, M. Houssa, H. Maes, G. Groeseneken, J.A. Kittl

Journal:

Microelectronics Reliability

Year:

2007

Language:

english

File:

PDF, 138 KB

english, 2007

22

Predictive Hot-Carrier Modeling of n-Channel MOSFETs

Bina, Markus, Tyaginov, Stanislav, Franco, Jacopo, Rupp, Karl, Wimmer, Yannick, Osintsev, Dmitry, Kaczer, Ben, Grasser, Tibor

Journal:

IEEE Transactions on Electron Devices

Year:

2014

Language:

english

File:

PDF, 1.05 MB

english, 2014

23

NBTI Reliability of SiGe and Ge Channel pMOSFETs With $ \hbox{SiO}_{2}/\hbox{HfO}_{2}$ Dielectric Stack

Franco, Jacopo, Kaczer, Ben, Mitard, Jerome, Toledano-Luque, Maria, Roussel, Philippe J., Witters, Liesbeth, Grasser, Tibor, Groeseneken, Guido

Journal:

IEEE Transactions on Device and Materials Reliability

Year:

2013

Language:

english

File:

PDF, 1.74 MB

english, 2013

24

Internal magnetic domain-structure investigations in iron silicon single crystals

Frank, F., Lang, A., Kaczer, J., Polcarov, M.

Journal:

IEEE Transactions on Magnetics

Year:

1966

Language:

english

File:

PDF, 195 KB

english, 1966

25

[IEEE 2010 IEEE International Reliability Physics Symposium - Garden Grove (Anaheim), CA, USA (2010.05.2-2010.05.6)] 2010 IEEE International Reliability Physics Symposium - Origin of NBTI variability in deeply scaled pFETs

Kaczer, B., Grasser, T., Roussel, Ph. J., Franco, J., Degraeve, R., Ragnarsson, L.-A., Simoen, E., Groeseneken, G., Reisinger, H.

Year:

2010

Language:

english

File:

PDF, 631 KB

english, 2010

26

[IEEE 2012 4th IEEE International Memory Workshop (IMW) - Milan, Italy (2012.05.20-2012.05.23)] 2012 4th IEEE International Memory Workshop - Understanding of Trap-Assisted Tunneling Current - Assisted by Oxygen Vacancies in RuOx/SrTiO3/TiN MIM Capacitor for the DRAM Application

Kim, M.-S., Kaczer, B., Starschich, S., Popovici, M., Swerts, J., Richard, O., Tomida, K., Vrancken, C., Van Elshocht, S., Debusschere, I., Altimime, L., Kittl, J. A.

Year:

2012

Language:

english

File:

PDF, 706 KB

english, 2012

27

The defect-centric perspective of device and circuit reliability—From gate oxide defects to circuits

Kaczer, B., Franco, J., Weckx, P., Roussel, Ph.J., Simicic, M., Putcha, V., Bury, E., Cho, M., Degraeve, R., Linten, D., Groeseneken, G., Debacker, P., Parvais, B., Raghavan, P., Catthoor, F., Rzepa,

Journal:

Solid-State Electronics

Year:

2016

Language:

english

File:

PDF, 3.17 MB

english, 2016

28

[IEEE 2018 IEEE International Reliability Physics Symposium (IRPS) - Burlingame, CA, USA (2018.3.11-2018.3.15)] 2018 IEEE International Reliability Physics Symposium (IRPS) - Characterization and physical modeling of the temporal evolution of near-interfacial states resulting from NBTI/PBTI stress in nMOS/pMOS transistors

Grasser, T., Stampfer, B., Waltl, M., Rzepa, G., Rupp, K., Schanovsky, F., Pobegen, G., Puschkarsky, K., Reisinger, H., O'Sullivan, B., Kaczer, B.

Year:

2018

Language:

english

File:

PDF, 402 KB

english, 2018

29

[IEEE 2018 14th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT) - Qingdao, China (2018.10.31-2018.11.3)] 2018 14th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT) - (Invited) Recent insights in CMOS reliability characterization by the use of degradation maps

Bury, E., Chasin, A., Kaczer, B., Chuang, K.-H., Franco, J., Simicic, M., Weckx, P., Linten, D.

Year:

2018

Language:

english

File:

PDF, 7.19 MB

english, 2018

30

[IEEE ESSDERC 2019 - 49th European Solid-State Device Research Conference (ESSDERC) - Cracow, Poland (2019.9.23-2019.9.26)] ESSDERC 2019 - 49th European Solid-State Device Research Conference (ESSDERC) - Stochastic Modeling of Hot-Carrier Degradation in nFinFETs Considering the Impact of Random Traps and Random Dopants

Makarov, Alexander, Linten, Dimitri, Tyaginov, Stanislav, Kaczer, Ben, Roussel, Philippe, Chasin, Adrian, Vandemaele, Michiel, Hellings, Geert, El-Sayed, Al-Moatasem, Jech, Markus, Grasser, Tibor

Year:

2019

Language:

english

File:

PDF, 5.41 MB

english, 2019

31

A Rigorous Study of Measurement Techniques for Negative Bias Temperature Instability

Grasser, Tibor, Wagner, Paul-JÜrgen, Hehenberger, Philipp, Goes, Wolfgang, Kaczer, Ben

Journal:

IEEE Transactions on Device and Materials Reliability

Year:

2008

Language:

english

File:

PDF, 1.32 MB

english, 2008

32

Interference Conditions of the Reconsolidation Process in Humans: The Role of Valence and Different Memory Systems

Fernández, Rodrigo S., Bavassi, Luz, Kaczer, Laura, Forcato, Cecilia, Pedreira, María E.

Journal:

Frontiers in Human Neuroscience

Year:

2016

Language:

english

File:

PDF, 3.61 MB

english, 2016

33

The influence of elevated temperature on degradation and lifetime prediction of thin silicon-dioxide films

Kaczer, B., Degraeve, R., Pangon, N., Groeseneken, G.

Journal:

IEEE Transactions on Electron Devices

Year:

2000

Language:

english

File:

PDF, 200 KB

english, 2000

34

[IEEE 2014 IEEE 21st International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) - Marina Bay Sands, Singapore (2014.6.30-2014.7.4)] Proceedings of the 21th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) - Study of (correlated) trap sites in SILC, BTI and RTN in SiON and HKMG devices

Bury, Erik, Degraeve, Robin, Cho, Moon Ju, Kaczer, Ben, Goes, Wolfgang, Grasser, Tibor, Horiguchi, Naoto, Groeseneken, Guido

Year:

2014

Language:

english

File:

PDF, 3.96 MB

english, 2014

35

Maradona in our minds: The FIFA World Cup as a way to address collective memory properties

Bavassi, Luz, Kaczer, Laura, Fernández, Rodrigo S.

Journal:

Memory & Cognition

Year:

2019

File:

PDF, 956 KB

2019

36

[IEEE ESSDERC 2003. 33rd European Solid-State Device Research - ESSDERC '03 - Estoril, Portugal (16-18 Sept. 2003)] Electrical Performance of Electrical Packaging (IEEE Cat. No. 03TH8710) - Experimental verification of SRAM cell functionality after hard and soft gate oxide breakdowns

Kaczer, B., Degraeve, R., Augendre, E., Jurczak, M., Groeseneken, G.

Year:

2003

Language:

english

File:

PDF, 290 KB

english, 2003

37

Improved Channel Hot-Carrier Reliability in $p$-FinFETs With Replacement Metal Gate by a Nitrogen Postdeposition Anneal Process

Cho, Moonju, Arimura, Hiroaki, Lee, Jae Woo, Kaczer, Ben, Veloso, Anabela, Boccardi, Guillaume, Ragnarsson, Lars-Ake, Kauerauf, Thomas, Horiguchi, Naoto, Groeseneken, Guido

Journal:

IEEE Transactions on Device and Materials Reliability

Year:

2014

Language:

english

File:

PDF, 992 KB

english, 2014

38

[IEEE 2014 IEEE International Reliability Physics Symposium (IRPS) - Waikoloa, HI, USA (2014.6.1-2014.6.5)] 2014 IEEE International Reliability Physics Symposium - Physical modeling of hot-carrier degradation for short- and long-channel MOSFETs

Tyaginov, Stanislav, Bina, Markus, Franco, Jacopo, Osintsev, Dmitri, Triebl, Oliver, Kaczer, Ben, Grasser, Tibor

Year:

2014

Language:

english

File:

PDF, 904 KB

english, 2014

39

Extensive assessment of the charge-trapping kinetics in InGaAs MOS gate-stacks for the demonstration of improved BTI reliability

Putcha, Vamsi, Franco, Jacopo, Vais, Abhitosh, Kaczer, Ben, Xie, Qi, Maes, Jan Willem, Tang, Fu, Givens, Michael, Collaert, Nadine, Linten, Dimitri, Groeseneken, Guido

Journal:

Microelectronics Reliability

Year:

2020

File:

PDF, 4.85 MB

2020

40

Stripe and bubble domains in CoCr films

Simsova, J., Gemperle, R., Kaczer, J., Lodder, J.C.

Journal:

IEEE Transactions on Magnetics

Year:

1990

Language:

english

File:

PDF, 410 KB

english, 1990

41

Defect-centric perspective of time-dependent BTI variability

M. Toledano-Luque, B. Kaczer, J. Franco, Ph.J. Roussel, T. Grasser, G. Groeseneken

Journal:

Microelectronics Reliability

Year:

2012

Language:

english

File:

PDF, 1.88 MB

english, 2012

42

[IEEE 2011 IEEE International Symposium on Circuits and Systems (ISCAS) - Rio de Janeiro, Brazil (2011.05.15-2011.05.18)] 2011 IEEE International Symposium of Circuits and Systems (ISCAS) - Experimental analysis of buried SiGe pMOSFETs from the perspective of aggressive voltage scaling

Crupi, Felice, Alioto, Massimo, Franco, Jacopo, Magnone, Paolo, Kaczer, Ben, Groeseneken, Guido, Mitard, Jerome, Witters, Liesbeth, Hoffmann, Thomas Y.

Year:

2011

Language:

english

File:

PDF, 343 KB

english, 2011

43

[IEEE 64th ARFTG Microwave Measurements Conference, Fall 2004. - Orlando, FL, USA (Dec. 2-3, 2004)] 64th ARFTG Microwave Measurements Conference, Fall 2004. - Analysing impact of mosfet oxide breakdown by small- and large-signal HF measurements

Schreurs, D., Pantisano, L., Kaczer, B.

Year:

2004

Language:

english

File:

PDF, 1010 KB

english, 2004

44

Correlated Time-0 and Hot-Carrier Stress Induced FinFET Parameter Variabilities: Modeling Approach

Makarov, Alexander, Roussel, Philippe, Bury, Erik, Vandemaele, Michiel, Spessot, Alessio, Linten, Dimitri, Kaczer, Ben, Tyaginov, Stanislav

Journal:

Year:

2020

File:

PDF, 2.77 MB

2020

45

[IEEE 2011 IEEE International Electron Devices Meeting (IEDM) - Washington, DC, USA (2011.12.5-2011.12.7)] 2011 International Electron Devices Meeting - Analytic modeling of the bias temperature instability using capture/emission time maps

Grasser, T., Wagner, P.-J., Reisinger, H., Aichinger, Th., Pobegen, G., Nelhiebel, M., Kaczer, B.

Year:

2011

Language:

english

File:

PDF, 337 KB

english, 2011

46

[IEEE 2014 IEEE International Integrated Reliability Workshop Final Report (IIRW) - South Lake Tahoe, CA, USA (2014.10.12-2014.10.16)] 2014 IEEE International Integrated Reliability Workshop Final Report (IIRW) - BTI reliability of high-mobility channel devices: SiGe, Ge and InGaAs

Franco, J., Kaczer, B., Roussel, J., Cho, M., Grasser, T., Mitard, J., Arimura, H., Witters, L., Cott, D., Waldron, N., Zhou, D., Vais, A., Lin, D., Alian, A., Pourghaderi, M. A., Martens, K., Sioncke

Year:

2014

Language:

english

File:

PDF, 791 KB

english, 2014

47

[IEEE 2015 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) - Washington DC, USA (2015.9.9-2015.9.11)] 2015 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) - Reliability aware simulation flow: From TCAD calibration to circuit level analysis

Hussin, Razaidi, Gerrer, Louis, Ding, Jie, Amaroso, Salvatore Maria, Wang, Liping, Semicic, Marco, Weckx, Pieter, Franco, Jacopo, Vanderheyden, Annelies, Vanhaeren, Danielle, Horiguchi, Naoto, Kaczer,

Year:

2015

Language:

english

File:

PDF, 1.43 MB

english, 2015

48

[IEEE 2019 IEEE International Integrated Reliability Workshop (IIRW) - South Lake Tahoe, CA, USA (2019.10.13-2019.10.17)] 2019 IEEE International Integrated Reliability Workshop (IIRW) - Reliability in Stacked Gate-All-Around Si Nanowire Devices: Time-Dependent Variability and Full Degradation Mapping

Chasin, Adrian, Horiguchi, Naoto, Linten, Dimitri, Bury, Erik, Franco, Jacopo, Kaczer, Ben, Rzepa, Gerhard, Putcha, Vamsi, Weckx, Pieter, Ritzenthaler, Romain, Mertens, Hans

Year:

2019

File:

PDF, 3.48 MB

2019

49

The Paradigm Shift in Understanding the Bias Temperature Instability: From Reaction–Diffusion to Switching Oxide Traps

Grasser, T., Kaczer, B., Goes, W., Reisinger, H., Aichinger, T., Hehenberger, P., Wagner, P., Schanovsky, F., Franco, J., Luque, M.T., Nelhiebel, M.

Journal:

IEEE Transactions on Electron Devices

Year:

2011

Language:

english

File:

PDF, 2.35 MB

english, 2011

50

[IEEE 2005 Symposium on VLSI Technology - Kyoto, Japan (2005.06.14-2005.06.16)] Digest of Technical Papers. 2005 Symposium on VLSI Technology, 2005. - Layout impact on the performance of a locally strained PMOSFET

Eneman, S., Verheyen, P., Rooyackers, R., Nouri, F., Washington, L., Degraeve, R., Kaczer, B., Moroz, V., De Keersgieter, A., Schreutelkamp, R., Kawaguchi, M., Kim, Y., Samoilov, A., Smith, L., Absil,

Year:

2005

Language:

english

File:

PDF, 404 KB

english, 2005

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